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Optical Nanolithography Using Evanescent Fields

Published online by Cambridge University Press:  11 February 2011

Richard J. Blaikie ,
Sharee J. McNab  and
Maan M. Alkaisi
Richard J. Blaikie
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
Sharee J. McNab
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
Maan M. Alkaisi
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
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Abstract

In the optical near field region the well understood resolution limits for projection optical lithography can be overcome. This offers the possibility of performing optical nanolithography without the need to use expensive, deep ultraviolet light sources. For exposures that utilise evanescent fields close to metallic amplitude masks sub-diffraction-limited resolution has been achieved experimentally, and the theoretical resolution limits have been explored using vector electromagnetic near field simulations. Resolution down to 20nm using exposure wavelengths greater than 400nm is predicted. It is also found that the exposure wavelength is of secondary importance in this regime, and that the properties of the mask are much more significant. Scaling to smaller feature sizes requires better resolution and control during mask manufacture, rather than the conventional (and costly) approach of driving the exposure wavelength deeper and deeper into the ultraviolet. Near field interference effects have also been explored, and the characteristics of spatial frequency doubling using Evanescent Interferometric Lithography (EIL) have been determined by simulation. Sub-diffraction-limited resolution can be achieved with increased exposure intensity compared with conventional interferometric lithography. The tradeoff is against the depth of field in the resultant interference pattern. Finally, the use of negative refraction and surface plasmons have been investigated to improve further the resolution in the evanescent near field, and to produce novel, three dimensional near field patterns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 739: Symposium H – Three-Dimensional Nanoengineered Assemblies , 2002 , H2.4
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Smith, H. I., Efremow, N. and Kelly, P. L., J. Electrochem. Soc. 121, 1503 (1974).Google Scholar
2 Fischer, U. C. and Zingsheim, H. P., J. Vac. Sci. Technol. 19, 881 (1981).Google Scholar
3 Davy, S. and Spajer, M., Appl. Phys. Lett. 69, 3306 (1996).Google Scholar
4 Bouchiat, V. and Esteve, D., Appl. Phys. Lett. 69, 398 (1996).Google Scholar
5 Schmid, H., Biebuyck, H., Michel, B., Martin, O. J. F. and Piller, N. B., J. Vac. Sci. Technol B 16, 3422 (1998).Google Scholar
6 Rogers, J. A., Paul, K. E., Jackman, R. J. and Whitesides, G. M., Appl. Phys. Lett. 70, 2658 (1997).Google Scholar
7 Smith, H. I., Rev. Sci. Instrum. B 40, 729 (1969).Google Scholar
8 Goodberlet, J. G., Appl. Phys Lett. 76, 667 (2000).Google Scholar
9 Goodberlet, J. G. and Bryan, L. D., Microelectronic Engineering 53, 95 (2000).Google Scholar
10 Goodberlet, J. G. and Kavak, H., Appl. Phys. Lett. 81, 1315 (2002).Google Scholar
11 Ono, T. and Esashi, M., Jpn. J. Appl. Phys. 37, 6745 (1998).Google Scholar
12 Blaikie, R. J., Alkaisi, M. M., McNab, S. J., Cumming, D. R. S., Cheung, R., and Hasko, D. G., Microelectronic Engineering 46, 85 (1999).Google Scholar
13 Alkaisi, M. M., Blaikie, R. J., McNab, S. J., Cheung, R., Cumming, D. R. S., Appl. Phys. Lett. 75, 3560 (1999).Google Scholar
14 McNab, S. J. and Blaikie, R. J., Appl. Opt. 39, 20 (2000).Google Scholar
15 Alkaisi, M. M., Blaikie, R. J. and McNab, S. J., Adv. Mater. 13, 877 (2001).Google Scholar
16 Blaikie, R. J. and McNab, S. J., Appl. Opt. 40, 1692 (2001).Google Scholar
17 Blaikie, R. J. and McNab, S. J., Microelectron. Eng. 61–62, 97 (2002).Google Scholar
18 Paulus, M., Schmid, H., Michel, B. and Martin, O.J.F., Microelectron. Eng. 57–58, 109 (2001).Google Scholar
19 Ebbesen, T. W., Lezec, H. J., Ghaemi, H. F., Thio, T. and Wolff, P. A., Nature 391, 667 (1998).Google Scholar
20 Rai-Choudhury, P., (Ed.), Microlithography, Micromachining, and Microfabrication. Volume 1: Microlithography. SPIE Press, Washington, pp. 31–33 (1997).Google Scholar
21 Chou, S. Y., Krauss, P. R. and Renstrom, P. J., Appl. Phys. Lett. 67, 3114 (1995).Google Scholar
22 Betzig, E., Trautman, J. K., Harris, T. D., Weiner, J. S., and Kostelak, R. L., Science, 251, 1468 (1991).Google Scholar
23 Hafner, C., The Generalised Multipole Technique for Computational Electromagnetics (Artech House, Boston, 1990).Google Scholar
24 Pendry, J. B., Phys. Rev. Lett. 85, 3966 (2000).Google Scholar
25 Shelby, R. A., Smith, D. R. and Schultz, S., Science 292, 77 (2001).Google Scholar