Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T06:51:51.214Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Investigations on Donor Doped CdTe

Published online by Cambridge University Press:  26 February 2011

W. Stadler ,
B.K. Meyer ,
D.M. Hofmann ,
D. Sinerius  and
K.W. Benz
W. Stadler
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G.
B.K. Meyer
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G.
D.M. Hofmann
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. Solid State Department, University of Lund, Sweden
D. Sinerius
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. University of Freiburg, Kristallographisches Institut, Hebelstr. 25, 7800 Freiburg, F.R.G.
K.W. Benz
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. University of Freiburg, Kristallographisches Institut, Hebelstr. 25, 7800 Freiburg, F.R.G.
Get access

Abstract

The recombination luminescence involving the A-center, a Cd vacancy paired with a nearest neighbour donor, was investigated in CdTe doped with group VII and III elements. Depending on the type of donor doping, distinct differences in the A-center acceptor binding energies and electron phonon couplings are resolved. Optically detected magnetic resonance shows that the A-center behaves as a shallow effective masstype acceptor consiscent with its small binding energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 445
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Agrinskaya, N.V., Arkad'ova, E.N. and Matveev, O.A., Soy. Phys.Semicond. 5 (1971) 762 Google Scholar
[2] Norris, C.B. and Barnes, C.E., Rev, Phys. Appl. 12 (1977) 219 CrossRefGoogle Scholar
[3] Zanio, K. in : Semiconductors and Semimetals, Ed. Willardson, R.K. and Boor, A.C. (Academic Press, N.Y., 1978)Google Scholar
[4] Molva, E. and Si Dang, Le, Phys. Rev. B 27 (1983) 6222 Google Scholar
[5] Dunstan, D.J. and Davies, J.J., J. Phys. C 12 (1979) 2927 Google Scholar
[6] Schneider, J. in : II-VI Semiconducting Compounds, Ed. Thomas, D.G. (Benjamin, W.A., N.Y. 1967) p. 160Google Scholar
[7] Saminadayar, A., Galland, D. and Molva, E., Solid State Comm. 49 (1984) 627 CrossRefGoogle Scholar
[8] Hofmann, D.M. and Meyer, B.K., Phys. Rev.,to be publishedGoogle Scholar