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Optical Gain in Bgan Lattice-Matched to (0001) 6H-SiC

  • T. Honda (a1), M. Tsubamoto (a1), Y. Kuga (a1) and H. Kawanishi (a1)

Abstract

The optical gain of a BGaN ternary system lattice-matched to 6H-SiC was estimated. The parameters used in this estimation, such as effective mass and a bandgap energy, were estimated according to Harrison's theory. The optical gain was estimated using the density matrix theory with intraband relaxation broadening. The transparency carrier density of BGaN is slightly only smaller than that of GaN. It may be possible to fabricate a BGaN-based semiconductor laser operating in the UV spectral region.

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