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Optical Emission Spectroscopy and Laser Doppler Velocimetry for an RF Thermal Plasma CVD Process

Published online by Cambridge University Press:  21 February 2011

T. Ishigaki ,
Y. Moriyoshi  and
I. Iwamoto
T. Ishigaki
Affiliation:
National Institute for Research in Inorganic Materials, 1–1, Namiki, Tsukuba-shi, Ibaraki 305, Japan
Y. Moriyoshi
Affiliation:
National Institute for Research in Inorganic Materials, 1–1, Namiki, Tsukuba-shi, Ibaraki 305, Japan
I. Iwamoto
Affiliation:
Communications Research Laboratory, 4–2–1, Nukui-kitamachi, Koganei-shi, Tokyo 184, Japan
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Abstract

Optical emission spectroscopy and laser Doppler velocimetry were done for an Rf inductively coupled plasma at atmospheric pressure in order to elucidate the super-rapid coofling of the thermal plasma during the growth of diamond thin film. Attention was given to the vicinity of the water-cooled substrate located 20 mm beneath the RF coil. It was found that at 1.5 mm above the substrate, the temperature of plasma was still high. At the temperature, high concentration of hydrogen atoms exist, which may take a important role in diamond growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 89
Copyright
Copyright © Materials Research Society 1991

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References

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