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Optical & Electronic Properties of Carbon Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

M. Chhowalla ,
R. A. Aharonov ,
M. Akiyama  and
G. A. J. Amaratunga
M. Chhowalla
Affiliation:
Dept. of Electrical Eng. &Electronics University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK.
R. A. Aharonov
Affiliation:
Multi-Arc Inc., 200 Roundhill Drive, Rockaway, NJ, 07866, USA.
M. Akiyama
Affiliation:
Dept. of Electrical Eng. &Electronics University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK.
G. A. J. Amaratunga
Affiliation:
Dept. of Electrical Eng. &Electronics University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK.
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Abstract

We have deposited carbon nitride (CNx) films by magnetron sputtering at varying nitrogen pressures and substrate temperatures. The films were deposited on silicon and quartz substrates simultaneously. The incoming ion energy was controlled by a radio frequency power supply. A magnet in front of the substrate holder was used to enhance the plasma density. The films deposited at room temperature (RT) were found to have nitrogen content of ≥ 40%. These films were semiconducting with an optical bandgap of greater than 2 eV and a RT resistivity of 1012 Ω-cm. Films deposited at low nitrogen pressure (< 7 mtorr), at RT and in the presence of a 15 mtesla magnetic field were found to be hard and also exhibited extremely high elastic recovery. The most interesting result we found was that the hard and elastic CN films were also semiconducting with an optical band gap of 1.7 eV, RT resistivity of 107 Ω-cm and an activation energy of 0.8 eV. In all cases the CN films were almost entirely sp2 bonded.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 259
Copyright
Copyright © Materials Research Society 1998

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References

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