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Optical Characterization of High Quality GaN Produced by High Rate Magnetron Sputter Epitaxy

Published online by Cambridge University Press:  11 February 2011

Minseo Park ,
E. Carlson ,
Y. C Chang ,
J. F. Muth ,
J. Bumgarner ,
R. M. Kolbas ,
J. J. Cuomo  and
R. J. Nemanich
Minseo Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
E. Carlson
Affiliation:
Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617
Y. C Chang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J. F. Muth
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J. Bumgarner
Affiliation:
Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617
R. M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J. J. Cuomo
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10–60 m/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×1016 cm−3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E2(2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L4.12
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Hovel, H. J. and Cuomo, J. J., Appl. Phys. Lett., 20, 71 (1972).Google Scholar
2. Tang, H., Webb, J., Bardwell, J., Leathem, B., Charbonneau, S., and Raymond, S., J. Electron. Mater. 29, 268 (2000).Google Scholar
3. Kubota, K., Kobayashi, Y., and Fujimoto, K., J. Appl. Phys. 66, 2984 (1989).Google Scholar
4. Singh, P., Corbett, J. M., Webb, J. B., Charbonneau, S., Yang, F., and Robertson, M. D., J. Vac. Sci. Technol. A16, 786 (1998).Google Scholar
5. Ross, J. and Rubin, M., J. Mater. Res., 8, 2613 (1993).Google Scholar
6. Tansley, T. L. and Egan, R. J., Thin Solid Films, 164, 441 (1988).Google Scholar
7. Webb, J. B., Northcott, D., Charbonneau, S., Yang, F., Lockwood, D. J., Malvezin, O., Singh, P. and Corbett, J., Materials Science Forum, 264, 1229 (1998).Google Scholar
8. Romano, L. T., Krusor, B. S., and Molnar, R. J., Appl. Phys. Lett., 71, 2283 (1997).Google Scholar
9. Tavernier, P. R. and Clarke, D. R., J. Am. Ceram. Soc., 85, 49 (2002).Google Scholar
10. Valcheva, E., Paskova, T., Persson, P. O. Å., Hultman, L., and Monemar, B., Appl. Phys. Lett., 80, 1550 (2002).Google Scholar
11. di Forte-Poisson, M. A., Huet, F., Romann, A., Tordjman, M., Lancefield, D., Pereira, E., Di Persio, J., and Pecz, B., J. Cryst. Growth 195, 314 (1998).Google Scholar
12. Klein, M. V. in: Light Scattering in Solids, Ed. Cardona, M., Spinger-Verlag, Berlin, Heidelberg, New York 1975.Google Scholar
13. Mooradian, A. and Wright, G. B., Phys. Rev. Lett., 16, 999 (1966).Google Scholar
14. Varga, B. B., Phys. Rev. A137, 1896 (1965).Google Scholar
15. Yugami, H., Nakashima, S., and Mitsuishi, A., J. Appl. Phys. 61, 354 (1987).Google Scholar
16. Faust, W. L. and Henry, C. H., Phys. Rev. Lett. 17, 1265 (1966).Google Scholar
17. Bergman, L., Alexon, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., Shin, H., and Davis, R. F., Phys. Rev. B59, 12977 (1999).Google Scholar
18. Kuball, M., Hayes, J. M., Shi, Y., and Edgar, J. H., Appl. Phys. Lett. 77, 1958 (2000).Google Scholar