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Optical Characterization Of GaAs/Si: Spectral Features in the Excitonic Region

Published online by Cambridge University Press:  28 February 2011

S. Zemon ,
S. K. Shastry ,
C. Jagannath ,
P. Norris  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
S. K. Shastry
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
P. Norris
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
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Abstract

Using 4.2 K selective photoluminescence (PL) excitation and PL excitation spectroscopy, the n = 2 excited state of the light-hole exciton is observed for the first time in GaAs/Si. The excited state is about 3 meV above the ground state, similar to exciton results for GaAs/GaAs. A spectral width of 1.8 meV is observed for the ground state transition, the narrowest yet reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 261
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Zemon, S., Shastry, S. K., Norris, P., Jagannath, C., and Lambert, G., Solid State Commun. 58, 457 (1986).Google Scholar
2. Zemon, S., Jagannath, C., Koteles, E. S., Shastry, S. K., Norris, P., Lambert, G., Choudhury, A.N.M. M., and Armiento, C. A., Proc. Int. Symp. GaAs and Related Compounds, Las Vegas, 1986 (to be published).Google Scholar
3. Akiyama, M., Kawareda, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L843 (1984).Google Scholar
4. Koteles, Emil S., Elman, B. S., and Zemon, Stanley A., Solid State Commun. (to be published).Google Scholar
5. Shastry, S. K., Zemon, S., and Norris, P., Proc. Int. Symp. GaAs and Related Compounds, Las Vegas, 1986 (to be published).Google Scholar
6. Shastry, S. K. and Zemon, S., Appl. Phys. Lett. 49, 467 (1987).Google Scholar
7. See Fig. 3 of , Heim and Hiesinger, P., Phys. Stat. Sol. (b) 66, 461 (1974).Google Scholar
8. Sell, D. D., Phys. Rev. B 6, 3750 (1972).Google Scholar
9. Jagannath, C. and Koteles, Emil S., Solid State Commun. 58, 417 (1986);Google Scholar
9a Jagannath, C., Koteles, Emil S., Lee, Johnson, Chen, Y. J., Elman, B. S., and Chi, J. Y., Phys. Rev. B 34, 7027 (1986).Google Scholar