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Optical Characterization of Amorphous SiNx:H Films Prepared by Plasma-Enhanced CVD

Published online by Cambridge University Press:  25 February 2011

Rung-Ywan Tsai ,
L. C. Kuo  and
F. C. Ho
Rung-Ywan Tsai
Affiliation:
Industrial Technology Research Institute, OES, bldg. 44, 195, Chung Hsing Rd., Sec. 4, Chutung, Taiwan 31015, R.O.C.
L. C. Kuo
Affiliation:
Industrial Technology Research Institute, OES, bldg. 44, 195, Chung Hsing Rd., Sec. 4, Chutung, Taiwan 31015, R.O.C.
F. C. Ho
Affiliation:
Industrial Technology Research Institute, OES, bldg. 44, 195, Chung Hsing Rd., Sec. 4, Chutung, Taiwan 31015, R.O.C.
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Abstract

Amorphous SiNx:H thin films were prepared by plasma-enhanced CVD process. The effects of preparation conditions on the optical properties, compositions, and deposition rates of a-SiNx:H films were systematically studied by means of spectrophotometer, ellipsometer, and infrared spectroscopy measurements. It has been found that the refractive indices decrease with increasing the NH3 gas flow rate and the rf power, and increase with increasing the electrode spacing. Conversely, the deposition rates increase with increasing the NH3 gas flow rate and the rf power, and decrease with increasing the electrode spacing. There was no obvious effect of substrate temperatures ranging from 250 to 320°C on the optical properties and deposition rates of a-SiNx :H films. The decrease of the refractive index and the increase of the deposition rate were due to the increase of the nitrogen composition x occurring in the a-SiNx:H films. Refractive indices n and extinction coefficients k of a-SiNx:H films can be varied from n = 3.6 and k = 0.1 for x = 0 (pure a-Si:H) to n = 1.8 and k = 0 for x = 1.33 (pure a-Si3 N4:H) at the wavelength of 633 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 803
Copyright
Copyright © Materials Research Society 1993

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References

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