Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-24T04:46:40.848Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Anisotropy of Er Centers in GaAs:Er,O

Published online by Cambridge University Press:  10 February 2011

R. A. Hogg ,
K. Takahei ,
A. Taguchi  and
Y. Horikoshi
R. A. Hogg
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
K. Takahei
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
A. Taguchi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
Y. Horikoshi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
Get access

Abstract

For GaAs:Er,O the anisotropic photoluminescence (PL) properties of the Er-20 center and its preferential alignment within the GaAs matrix have been revealed by the polarization dependence of host-excited PL when detecting emission polarized along certain crystallographic directions. In the present paper, a polarized intra-4f-shell photoluminescence excitation (PLE) spectroscopic study of Er centers incorporated in GaAs is reported. This technique is not only sensitive to those centers which luminesce under host-excitation, but also to other Er centers incorporated in the host, thus allowing the polarized PL properties of most Er centers to be studied. A comparison of the polarization characterisitcs of host-excited PL and direct intra-4f-shell PLE, due to the difference in the excitation mechanisms, is made and the information which may be gained from such measurements is discussed. For the Er-20 center, we confirm the optical anisotropy and preferential alignment of the center previously observed in host-excited PL. Incorporation mechanisms for the Er-20 center which could result in the observed polarization dependence are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 167
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[I] Rare Earth Doped Semiconductors, Materials Research Society Symposium Proceedings 1993, edited by Pomrenke, G.S., Klein, P.B., and Langer, D.W. (Materials Research Society, Pittsburgh, PA, 1993), Vol.301.Google Scholar
[2] Takahei, K., Taguchi, A., J. Appl. Phys. 74, 1979, (1993).Google Scholar
[3] Takahei, K., Taguchi, A., Jpn. J Appl. Phys. 33, 709, (1994).Google Scholar
[4] Takahei, K., Taguchi, A., J. Appl. Phys. 77, 1735, (1995).Google Scholar
[5] Takahei, K., Taguchi, A., Horikoshi, Y., Nakata, J.. J. Appl. Phys. 76, 4332, (1994).Google Scholar
[6] Haase, D., Dörnen, A., Takahei, K., Taguchi, A.. Presented at this conference.Google Scholar
[7] Taguchi, A., Takahei, K.. Proceedings to the 18th International Conference on Defects in Semiconductors. Materials Science Forum, 197, 633, (1995).Google Scholar
[8] Feofilov, P.P., Kaplyanskii, A.A.. Sov. Phys. Uspekhi. 5, 79, (1962).Google Scholar
[9] Buyanova, I.A., Neuhalfen, A.J., Wessels, B W. Appl. Phys. Lett. 61, 2461, (1992).Google Scholar
[10] Hogg, R.A., Takahei, K., Taguchi, A., Horikoshi, Y.. Appl. Phys. Lett. In Press.Google Scholar
[11] Takahei, K.. Unpublished results.Google Scholar
[12] Neave, J.H., Joyce, B.A., Dobson, P.J., Norton, N.. Appl. Phys. A31, 1, (1983).Google Scholar
[13] Skolnick, M.S., Harris, T.D., Tu, C.W., Brennan, T.M., Sturge, M.D.. Appl. Phys. Lett. 46, 427, (1985). M.S. Skolnick, C.W. Tu, T.D. Harris. Phys. Rev. B33, 8468, (1986).Google Scholar
[14] Davidson, B.R., Newman, R.C., Kaneko, T., Naji, O.. Phys Rev. B50, 12250, (1994).B.R. Davidson, R.C. Newman, K.H. Bachem. Phys. Rev. B52, 5179, (1995).Google Scholar