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Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

  • H. Kanbe (a1), A. Chavez-Pirson (a1), M. Kumagai (a1), H. Saito (a1) and T. Fukui (a1)...

Abstract

The optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

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Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

  • H. Kanbe (a1), A. Chavez-Pirson (a1), M. Kumagai (a1), H. Saito (a1) and T. Fukui (a1)...

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