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Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

Published online by Cambridge University Press:  26 February 2011

H. Kanbe
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
A. Chavez-Pirson
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
M. Kumagai
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
H. Saito
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
T. Fukui
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
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Abstract

The optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Sakaki, H., IEEE J. Quantum Electron. QE- 22, 1845 (1986).CrossRefGoogle Scholar
[2] Arakawa, Y. and Yariv, A., IEEE J. Quantum Electron. QE- 22, 1887 (1986).Google Scholar
[3] Asada, M., Miyamoto, Y., and Suematsu, Y., IEEE J. Quantum Electron. QE- 22, 1915 (1986).CrossRefGoogle Scholar
[4] Takagahara, T., Solid State Commun. 78, 279 (1991).CrossRefGoogle Scholar
[5] Sakaki, H., Kato, K., and Yoshimura, H., Appl. Phys. Lett. 57, 2800 (1990).CrossRefGoogle Scholar
[6] Ando, H., Oohashi, H., and Kanbe, H., J. Appl. Phys. to be published in Dec. 1991 issue.Google Scholar
[7] Petroff, P. M., Gossard, A. C., and Wiezmann, W., Appl. Phys. Lett. 45, 620 (1984).Google Scholar
[8] Fukui, T. and Saito, H., Appl. Phys. Lett. 50, 824 (1987); J. Vac. Sci. Technol. B6, 1373 (1988).CrossRefGoogle Scholar
[9] Tsuchiya, M., Gaines, J. M., Yan, R. H., Simes, R. J., Holtz, P. O., Coldren, L. A., and Petroff, P. M., Phys. Rev. Lett. 62, 466 (1989).CrossRefGoogle Scholar
[10] Tanaka, M. and Sakaki, H., Appl. Phys. Lett. 54, 1326 (1989).Google Scholar
[11] Gorshoni, D., Weiner, J. S., Chu, S. N. G., Baraff, G. A., Vandenberg, J. M., Pfeiffer, L. N., West, K., Logan, R. A., and Tanbiin-Ek, T., Phys. Rev. Lett. 65, 1631 (1990).Google Scholar
[12] Kanbe, H., Chavez-Pirson, A., Ando, H., Saito, H., and Fukui, T., Appl. Phys. Lett. 58, 2969 (1991).Google Scholar
[13] Aspnes, D. E., Harbison, J. P., Studna, A. A., and Florez, L. T., Mater. Res. Soc. Proc. 91, 57 (1987); Phys. Rev. Lett. 59, 1687 (1987); Appl. Phys. Lett. 52, 957 (1988).CrossRefGoogle Scholar
[14] Ando, H., Fukui, T., and Saito, H., in Extended Abstracts of the 22nd Conf. on Solid State Devices and Materials, B–4–7, pp.123126.Google Scholar
[15] Petroff, P. M., Internat'l Inst. for Advanced Studies Symp. on Science and Tech nolgy of Mesoscopic Structures, ThA-4, Nara, Japan, Nov. 68, 1991.Google Scholar
[16] Kasu, M., Ando, H., Saito, H., and Fukui, T., Appl. Phys. Lett. 59, 301 (1991).CrossRefGoogle Scholar
[17] Yamanishi, M. and Suemune, K., Japan. J. Appl. Phys. 23, L35 (1984).CrossRefGoogle Scholar
[18] Asada, M., Kameyama, A., and Suematsu, Y., IEEE J. Quantum Electron. QE- 20, 745 (1984).Google Scholar
[19] Sercel, P. C. and Vahala, K. J., Phys. Rev. B 42, 3690 (1990).CrossRefGoogle Scholar
[20] Citrin, D. S. and Chang, Y.-C., J. Appl. Phys. 70, 867 (1991).Google Scholar
[21] Fukui, T., Saito, H., and Tokura, Y., Appl. Phys. Lett. 55, 1958 (1989).CrossRefGoogle Scholar
[22] Chavez-Pirson, A., Yumoto, J., Ando, II., Fukui, T., and Kanbe, II., Appl. Phys. Lett. to be published in Nov. 18, 1991 issue.Google Scholar