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Optical and Microstructural Properties of N- and Ga-Polarity GaN

Published online by Cambridge University Press:  01 February 2011

A. Bell
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
J. L. Smit
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
R. Liu
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
J. Mei
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
F. A. Ponce
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
H. M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
A. Chowdhury
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
N. G. Weimann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
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Abstract

The effect of polarity on the optical and microstructural properties of GaN is presented. A sample with adjacent domains of Ga- and N-polarity material was grown by varying the nucleation layer. This allows a unique opportunity to study the two different polarities under controlled conditions. We found that the N-polarity material has a much lower dislocation density than the Ga-polarity material. The N-polarity material contains voids that are not present in the Ga-polarity region. The surface roughness of the N-polarity material appears to be caused by Ga-polarity inversion domains which lead the growth. A cathodoluminescence study showed that the N-polarity material is much brighter than the Ga-polarity material, suggesting a higher donor concentration, probably due to increased impurity incorporation in the [0001] growth direction or possibly due to an increase in intrinsic point defects. There is also evidence that the N-polarity region contains two types of material, one is flat and can be etched, the other has an inclined facet and does not etch.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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