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Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated with Hydrogen-Plasma

Published online by Cambridge University Press:  01 February 2011

H.D. Nam ,
J.D. Song ,
W.J. Choi ,
J.I. Lee  and
H.S. Yang
H.D. Nam
Affiliation:
Nano-Device Reasearch Center, Korea Institute of Science and Technology, P.O.Box 131 Cheongryang, Seoul 130-650, Korea. Dept. of Physics, Chung-Ang University, Seoul 156-756, Korea.
J.D. Song
Affiliation:
Nano-Device Reasearch Center, Korea Institute of Science and Technology, P.O.Box 131 Cheongryang, Seoul 130-650, Korea.
W.J. Choi
Affiliation:
Nano-Device Reasearch Center, Korea Institute of Science and Technology, P.O.Box 131 Cheongryang, Seoul 130-650, Korea.
J.I. Lee
Affiliation:
Nano-Device Reasearch Center, Korea Institute of Science and Technology, P.O.Box 131 Cheongryang, Seoul 130-650, Korea.
H.S. Yang
Affiliation:
Dept. of Physics, Chung-Ang University, Seoul 156-756, Korea.
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Abstract

We have carried out hydrogen-plasma (H-plasma) treatments on a quantum dot infrared photodetector (QDIP) structure, with a 5-stacked InAs dots in an InGaAs well structure and a Al0.3Ga0.7As/GaAs superlattice barrier. The sample structures were grown by molecular beam epitaxy. The H-plasma treatment has been carried out at 150 °C for 3 min – 40 min with 40 sccm of H2 gas flow rate and 10 W of RF power. After H-plasma treatment, photoluminescence (PL) intensities of the samples were slightly reduced compared to that of as-grown sample, without any changes in their PL peak position. The dark currents of H-plasma treated samples were much smaller by many orders of magnitudes than that for as-grown sample. The sample exposed to Hplasma for 10 min showed the lowest dark current, enabling the observation of photocurrent with a wide spectrum between 3 – 12 μim at 11 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.40
Copyright
Copyright © Materials Research Society 2005

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