Skip to main content Accessibility help
×
Home

Optical Analysis of Plasma Enhanced Crystallization of Amorphous Silicon Films

  • L. Montès (a1), L. Tsybeskov (a2), P. M. Fauchet (a1), K. Pangal (a3), J. C. Sturm (a3) and S. Wagner (a3)...

Abstract

Low-temperature crystallization of a-Si is important for display and Silicon-On- Insulator (SOT) technologies. We present optical characterization (Raman scattering and photoluminescence) of H2 and O2 plasma enhanced crystallization of a-Si:H films. H2 plasma treatment is shown to be the most efficient, leading to larger grain sizes, and both H2 and O2 plasma lead to visible photoluminescence (PL). Recently, the PL of re-crystallized a-Si films has been explained in terms of quantum confinement [1]. The mean size of the crystallites in our re-crystallized films is determined by Raman scattering for different treatments parameters. No correlation between size and the photon energy of the visible emission is found. However, we can clearly distinguish between the PL from purely amorphous and re-crystallized a-Si:H films: Their PL temperature dependence and spectra are very different. The origin of the visible PL in re-crystallized thin Si films is discussed.

Copyright

References

Hide All
1. Tong, S., Liu, X. -n., and Bao, X. -m., Appl. Phys. Lett. 66 (4), 469 (1995); S.Tong, X.-n. Liu, T.Gao, X-m Bao, Y.Chang, W-z Shen and W.-g.Tang, Solid State Commun. 104 (10), 603 (1997).
2. Canham, L. T., Appl. Phys. Lett. 57 (10), 1046 (1990)
3. Solomon, I., Wehrspohn, R. B., Chazalviel, J. -N., Ozanam, F., J. Non-crystalline Solids 227–230, 248. (1998); M.J.Estes and G.Moddel, Appl. Phys. Lett. 68 (13), 1814 (1996).
4. Bustarret, E., Sauvain, E., and Rosenbauer, M., Thin Solid Films 276(1/2), 134 (1996).
5. Luterová, K., Knápek, P., Stuchlík, J., Kocka, J., Poruba, A., Kudrna, J., Malý, P., Valenta, J., Dian, J., Hönerlage, B., Pelant, I., J.Non-crystalline Solids, 227–230, 254 (1998).
6. Lockwood, D. J.,, Lu, Z. -H., and Baribeau, J. M., Phys. Rev. Letters 76 (3), 539 (1996); L.Tsybeskov, G.F.Groin, K.D.Hirshman, L.Montès, and P.M.Fauchet, T.N. Blanton, J.P.McCaffr-ey, J.M.Baribeau, G.I. Sproulc, H.J.Labbé and D.J.Lockwood, MRS Fall Meeting 1998 (Symp. F)
7. Pangal, K., Sturm, J. C. and Wagner, S., Proc. Symp. Mat. Res. Soc. 507 (1998) (to be published)
8. Fauchet, P. M., Light Scattering in Semiconductors Structures and Superlattices, edited by Lockwood, D. J. and Young, J. F., (Plenum Press, New York, 1991), p. 229
9. Tsu, R., Gonzalez-Hemandez, J., Chao, S. S., Lee, S. C., and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982); E.Bustarret and M.A.Hachicha, M.Brunel, Appl. Phys. Lett. 52 (20), 1675 (1988)
10. Collins, R. W., Paesler, M. A- and Paul, W., Solid State Commun. 34: (10), 833 (1980)
11. Street, R A., Semiconductors and Semimetals, Vol.21B, edited by Pankove, J. I. (Academic Press, Orlando, 1984), p. 197

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed