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Optical Absorption Study of Hydrogen In Zn-Doped Si

Published online by Cambridge University Press:  10 February 2011

M. Suezawa
M. Suezawa*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan, suezawa@imr.tohoku.ac.jp
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Abstract

We studied the interaction between hydrogen (H) and Zn or Zn-related defects in Zn-doped Si crystals from the measurements of optical absorption spectra of hydrogen bound to Zn or Znrelated defects. We doped Si crystals with Zn by annealing the crystals in Zn vapor at 1200°C followed by quenching. After Zn-doping, we doped specimens with H by annealing them in a hydrogen atmosphere followed by quenching. We measured optical absorption spectra of the above specimens at about 6 K by means of FT-IR spectrometry. Many optical absorption peaks were observed; some are due to electronic transitions and some are due to vibrational transitions of H vibration. Hydrogen atoms are known to passivate Zn acceptors since the optical absorption intensity associated with electronic transitions become much weaker after hydrogenation. Absorption peaks associated with H vibration are known to be related to complexes composed of one Zn atom and two hydrogen atoms. We concluded this from studies on the effect of co-doping with H and deuterium and the effect of Zn isotopes on the optical absorption spectra due to H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 357
Copyright
Copyright © Materials Research Society 1998

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References

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