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Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

S. A. Jackson  and
R. People
S. A. Jackson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
R. People
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

Using a realistic zone-folding scheme for a Ge(x)Si(1−x)/Si strained layer superlattice having a Si-like conduction band structure (i.e ≲85% Ge) we calculate the transition probability for the zone-folding induced direct optical gap and compare it with the indirect band gap absorption probability. The results suggest that such zone-folding induced direct optical transitions are promising for optical devices made from Ge(x)Si(1−x)/Si strained layer superlattices and like structures, provided they are fabricated in such a way that the appropriate zone-folding occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 365
Copyright
Copyright © Materials Research Society 1986

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References

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