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Optical Absorption and Luminescence Study of the Effect of Thermal Treatments on the Porous Silicon Surface

Published online by Cambridge University Press:  10 February 2011

R. Plugaru ,
G. Craciun ,
M. Bercu ,
J. Rams  and
J. Piqueras
R. Plugaru
Affiliation:
Institute of Microtechnology, Bucharest, R-72225, Romania, rodicap@imt.ro
G. Craciun
Affiliation:
Institute of Microtechnology, Bucharest, R-72225, Romania, rodicap@imt.ro
M. Bercu
Affiliation:
Faculty of Physic, University of Bucharest, POBox MG 11, Romania
J. Rams
Affiliation:
Dept. Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain, piqueras@eucmax.sim.ucm.es
J. Piqueras
Affiliation:
Dept. Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain, piqueras@eucmax.sim.ucm.es
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Abstract

The evolution of the cathodoluminescent emission bands of porous silicon at 420–480 nm, 540 nm and 640 nm under oxidizing and inert atmosphere annealings has been investigated and correlated to the structural reconstruction of the porous silicon surface during the treatments. Dry oxidation at low temperature of 450°C determines a less defected bonding interface structure of the growing oxide matrix comparatively with an oxidation treatment at 1000°C. The optical absorption band at 883 cm−1 observed in the 1000°C oxidized porous silicon is correlated to the presence of the interface defect centers. The quenching of the 540 nm and 640 nm emission bands in the high temperature oxidized porous silicon results from nonradiative transitions in the associated defect levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 209
Copyright
Copyright © Materials Research Society 2000

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