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A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor

Published online by Cambridge University Press:  21 February 2011

Z. Yaniv ,
G. Hansell ,
M. Vijan  and
V. Cannella
Z. Yaniv
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
G. Hansell
Affiliation:
Electrical and Computer Engineering Department, University of Michigan Ann Arbor, Michigan 48109, U.S.A.
M. Vijan
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
V. Cannella
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

A new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 293
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Snell, A.J., Mackenzie, K.D., Spear, W.E., and Lecomber, P.G., Appl. Phys., 24, 357, (1981).Google Scholar
2. Nave, Y., Knowu, Y., and Matzumura, M., 10th Int. Conf. on Amorphous and Liquid Semiconductors, Tokyo (1983).Google Scholar
3. denBoer, W., Geerts, M.J., and Ondris, M., 10th Int. Conf. on Amorphous and Liquid Semiconductors, Tokyo (1983).Google Scholar
4. Lakatos, A.I., Conf. Records of 1982 Int. Display Conf., SID, 146, (1982).Google Scholar
5. Ast, D.G., Conf. Records of 1982 Int. Display Conf., SID, 152, (1982).Google Scholar
6. Matsumura, M., US-Japan Joint Seminar on Technological Applications of Tetrahedral Amorphous Solids, Palo Alto, CA., (1982)Google Scholar
7. Kmetz, A.R., Japan Display 83, Proc. of 3rd Int. Display Research Conf., 2 (1983).Google Scholar
8. MacKenzie, K.D., Snell, A.J., French, I., LeComber, P.G., and Spear, W.E, Appl. Phys. A, 31, 87, (1983).Google Scholar
9. Willner, C., Yaniv, Z., Hansell, G. and Cannella, V., to be published.Google Scholar
10. Ovshinsky, S.R. and Madan, A., Nature, 276, 482 (1978).Google Scholar
11. Madan, A., Ovshinsky, S.R., and Benn, E., Phil. Mag., B40, 259, (1979).Google Scholar
12. Yaniv, Z., Hansell, G., Johnson, R., and Vijan, M., Application for Letters of Patent of the United States of America, (1983).Google Scholar
13. Yang, M., Hansell, G., Yaniv, Z., Cannella, V., Unpublished results.Google Scholar
14. Yaniv, Z., Cannella, V., Hansell, G. and Vijan, M., to be presented at the Tenth Int. Liq. Cryst. Conf., The University of York, U.K., July (1984).Google Scholar