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On the Structure of Planar Defects in ALN

Published online by Cambridge University Press:  21 February 2011

Stuart Mckernan  and
C. Barry Carter
Stuart Mckernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY
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Abstract

Aluminum nitride has a great potential as a semiconductor substrate material. However, the defects which occur in this material are very detrimental to the material properties. ‘Domelike’ or ‘D’ defects, consisting of a flat basal fault joined to a curved planar fault, are examined by TEM. They are shown to be inversion domains, using a newly developed technique for polarity determination in the TEM. Structural models are proposed for the defects which incorporate a layer of alumina one unit cell thick into the basal fault of the defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 259
Copyright
Copyright © Materials Research Society 1990

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