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On the scaling of exciton and impurity binding energies and the virial theorem in semiconductor quantum wells and quantum-well wires

Published online by Cambridge University Press:  21 March 2011

M. de Leyva-Dios  and
L. E. Oliveira
M. de Leyva-Dios
Affiliation:
Dept. of Theoretical Physics, Univ. of Havana, San Lazaro y L, Vedado, 10400, Havana, Cuba
L. E. Oliveira
Affiliation:
Instituto de Física, Unicamp, CP 6165, Campinas, São Paulo, 13083-970, Brazil
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Abstract

We have used the variational and fractional-dimensional space approaches in a study of the virial theorem value and scaling of the shallow-donor binding energies versus donor Bohr radiusin GaAs-(Ga,Al)As semiconductor quantum wells and quantum-well wires. A comparison is made with previous results with respect to exciton states. In the case the donor ground-state wave function may be approximated by a D-dimensional hydrogenic wave function, the virial theorem value equals 2 and the scaling rule for the donor binding energy versus quantum-sized Bohr radius is hyperbolic, both for quantum wells and wires. In contrast, calculations within the variational scheme show that the scaling of the donor binding energies with quantum-sized Bohr radius is in general nonhyperbolic and that the virial theorem value is nonconstant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.34.1
Copyright
Copyright © Materials Research Society 2002

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