Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T09:36:24.493Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Roles of Temperature and Interfaces in Irradiation and Thermally Induced Solid State Amorphization

Published online by Cambridge University Press:  21 February 2011

L.M. Wang ,
W.L. Gong ,
R.C. Ewing  and
W.J. Webert
L.M. Wang
Affiliation:
Dept. of Earth and Planetary Sciences, Univ. of New Mexico, Albuquerque, NM 87131
W.L. Gong
Affiliation:
Dept. of Earth and Planetary Sciences, Univ. of New Mexico, Albuquerque, NM 87131
R.C. Ewing
Affiliation:
Dept. of Earth and Planetary Sciences, Univ. of New Mexico, Albuquerque, NM 87131
W.J. Webert
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352
Get access

Abstract

The roles of irradiation temperature and interfaces (free surfaces and grain boundaries) in irradiation- and thermally- induced amorphization of ceramics (coesite, apatite, olivines and spinels) have been studied by transmission electron microscopy (TEM). The irradiations were performed with 1.5 MeV Kr+, 200 keV and 1 MeV electrons over a wide temperature range (20-700 K). The critical amorphization dose at which amorphization is complete, Dc, increased with increasing irradiation temperature for most materials except coesite (a high pressure polymorph of Si02) which showed a decreasing Dc with increasing temperature under 1 MeV electron irradiation. Although amorphization may occur directly within a displacement cascade or by cascade overlap, this study shows that free surfaces and grain boundaries are favorable sites for nucleation of amorphous volumes. Once the amorphous volume is formed at interfaces, it may grow rapidly under continued irradiation. Coesite which has a glass transition temperature higher than its melting temperature underwent spontaneous amorphization during thermal annealing at 1200 K. This thermally-induced amorphization also started at free surface and grain boundaries and propagated into the interior of the crystal. The interface-mediated amorphization is analogous to the process of thermodynamic melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 233
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wolf, D., Okamoto, P.R., Yip, S., Lutsko, J.F. and Kluge, M., J. Mater. Res. 5 (2), 286 (1990).Google Scholar
2 Lam, N.Q. and Okamoto, P.R., MRS Bulletin 19 (7), 41 (1994).Google Scholar
3 Koike, J., Okamoto, P.R., Rehn, L.E. and Meshii, M., J. Mater. Res. 4 (5), 1143 (1990).Google Scholar
4 Wang, L.M., Gong, W.L. and Ewing, R.C., Mat. Res. Soc. Symp. Proc. 316, 247 (1994).Google Scholar
5 Weber, W.J., Ewing, R.C., and Wang, L.M., J. Mater. Res. 9, 688 (1994).Google Scholar
6 Wang, L.M., Cameron, M., Weber, W.J., Crowley, K.D., and Ewing, R.C., in Hydroxyapatite and Related Compounds. Brown, P.W., and Constantz, B., Eds. (CRC Press, Boca Raton, FL, 1994) p. 243.Google Scholar
7 Weber, W.J. and Wang, L.M., Nucl. Instr. and Meth. B91, 63 (1994).Google Scholar
8 Yamada, R., Zinkle, S.J. and Pells, G.P., J. Nucl. Mater. 209, 191 (1994).Google Scholar
9 Fujita, H., Mori, H. and Fujita, M., Proc. 7th Int. Conf. on High Voltage Electron Microscopy, edited by Fisher, R.M., Gronsky, R. and Westmacott, K. (Berkeley, CA, 1983), p. 233.Google Scholar
10 Atwater, H.A. and Brown, W.L., Appl. Phys. Lett. 56 (1), 30 (1990).Google Scholar
11 Birtcher, R.C. and Wang, L.M., Nucl. Instr. and Meth. B59/60, 966 (1991).Google Scholar
12 Richet, P., Nature 331, 56 (1988).Google Scholar
13 Wang, L.M., Miller, M.L. and Ewing, R.C., Ultramicroscopy 51, 339 (1993).Google Scholar
14 Wang, L.M. and Weber, W.J., Mat. Res. Soc. Symp. Proc. 373, 389 (1995).Google Scholar
15 Gong, W.L., Wang, L.M., Ewing, R.C. and Fei, Y., Phys. Rev. B, in press.Google Scholar
16 Hobbs, L.W., Clinard, F.W. Jr., Zinkle, S.J. and Ewing, R.C., J. Nucl. Mater. 216 (1994) 291.Google Scholar
17 Zinkle, S.J., Nucl. Instr. and Meth. B91, 234 (1994).Google Scholar
18 Yu, N., Sickafus, K.E. and Nastasi, M., Phil. Mag. Lett. 70 (1994) 235.Google Scholar
19 Wang, L.M., Gong, W.L., Bordes, N., Ewing, R.C. and Fei, Y., Mat. Res. Soc. Symp. Proc. 373, 407 (1995).Google Scholar