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On the Origin of EL2 Intracenter Absorption Band in GaAs
Published online by Cambridge University Press: 26 February 2011
Abstract
An alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.
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- Copyright © Materials Research Society 1988
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