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On the Indium Precipitation in Silicon

Published online by Cambridge University Press:  21 February 2011

E. Ganin  and
W. Krakow
E. Ganin
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
W. Krakow
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Indium precipitation in Si after ion implantation and rapid thermal annealing was studied using plan-view and cross-sectional TEM and SIMS analysis. The precipitates were found to be single crystalline with the bulk In body-centered tetragonal lattice based on periodicity data in two dimensions. The orientation relationship between the precipitate and Si lattice has been derived to be:

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 135
Copyright
Copyright © Materials Research Society 1989

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References

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