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On the Formation of Ultrathin Simox Structures by Low Energy Implantation1

Published online by Cambridge University Press:  22 February 2011

F. Namavar ,
B. Buchanan  and
N. M. Kalkhoran
F. Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730–2396
B. Buchanan
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730–2396
N. M. Kalkhoran
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730–2396
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Abstract

Silicon-on-insulator (SOI) wafers made by standard energy (150–200 keV) Separation by IMplantation of Oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. However, if SIMOX material is to become a competitive substrate material for manufacturing commercial integrated circuits, the cost of the SIMOX wafers must be greatly reduced. The low energy SIMOX (LES) process accomplishes the needed reduction in cost by producing ultrathin layers which require much lower ion doses. These ultrathin layers are necessary for the next generation of commercial ultra high density CMOS integrated circuits, and must be of very high quality to be utilized for commercial applications. In this paper we discuss characterization of ultrathin LES structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 567
Copyright
Copyright © Materials Research Society 1993

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Footnotes

1

This work was supported in part by the Department of Defense, Rome Air Development Center/ESR. under Contract No. F19628-90-C-0081.

References

REFERENCES

1. Pinizzotto, R.F., Mat. Res. Soc. Symp. Proc. 27, 265 (1984).Google Scholar
2. Burnham, M.E. and Wilson, S.R., in Advanced Application of Ion Implantation, SPIE 530, (1985).Google Scholar
3. Hemment, P.L.F., Mat. Res. Soc. Symp. Proc. 53, 207 (1986).Google Scholar
4. Reeson, K.J., Robinson, A.K., Hemment, P.L.F., Marsh, C.D., Christensen, K.N., Booker, G.R., Chater, R.J., Kilner, J.A., Harbeke, G., Steigmeir, E.F., and Celler, G.K., Microelectronic Eng. 8, 163 (1988).Google Scholar
5. Namavar, F., Budnick, J.I., Sanchez, F.H., and Hayden, H.C., Mat. Res. Soc. Symp. Proc. 45, 317 (1985).Google Scholar
6. Cerofolini, G.F., “Chemistry for Innovative Materials,” Enichem., Milan, Italy, Nov. 1991.Google Scholar
7. Namavar, F., Cortesi, E., and Sioshansi, P., Mat. Res. Symp. Proc. 128, 623 (1989).Google Scholar
8. Namavar, F., Cortesi, E., Pinizzotto, R.F., and Yang, H., Mat. Res. Soc. Symp. Proc. 157, 179 (1990).Google Scholar
9. Namavar, F., Cortesi, E., Buchanan, B., and Sioshansi, P., IEEE SOS/SOI Technology Conference Proc, 117 (1989).Google Scholar
10. Namavar, F., Cortesi, E., Kalkhoran, N.M., Manke, J.M., and Buchanan, B., IEEE SOS/SOI Technology Conference Proc, 49 (1990).Google Scholar
11. Namavar, F., Cortesi, E., Manke, J., Kalkhoran, N.M., Mat. Res. Soc. Symp. Proc. Vol. 235, (1992).Google Scholar
12. Namavar, F., Cortesi, E., Manke, J.M., Kalkhoran, N.M., and Buchanan, B., IEEE SOI Technology Conference Proc, 108 (1991).Google Scholar
13. Namavar, F., Buchanan, B., Cortesi, E., and Sioshansi, P., Mat. Res. Soc. Symp. Proc. 147, 235 (1989).Google Scholar
14. Namavar, F., “Ultra-Thin SOI by Low Energy Oxygen Implantation,” proposal submitted by Spire Corporation to ESD/Hanscom AFB, MA, July 1989, unpublished, andGoogle Scholar
Namavar, F., “Silicon-On-Insulator (SOI) Technical Development,” RL-TR-91–175 (1991), Rome Laboratory AFSC, Grifiss AFB, NY 13441–5700.Google Scholar