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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers

  • D. Alquier (a1), N. E. B. Cowern (a2), P. Pichler (a3), C. Armand (a4), A. Martinez (a1), D. Mathiot (a5), M. Omri (a6) and A. Claverie (a6)...

Abstract

We have studied by SIMS the diffusion of boron in Ge-preamorphised silicon over a range of anneal temperatures and times, focusing on the influence of the depth of the boron profile relative to the crystalline-amorphous (c/a) interface. It is shown that, for all durations, transient enhanced diffusion (TED) occurs on both sides of the c/a interface. For short annealing times, the amplitude of TED varies by about two orders of magnitude between the surface and the end-of-range (EOR) defect band, formed just below the original c/a interface. We propose a model in which TED arises from the coupling between a Si-interstitial supersaturated « box », the EOR defect region, whose supersaturation decreases with time as the EOR defects grow, and a surface whose recombination efficiency is close to that of a perfect sink. The model successfully describes the different behavior of deep and shallow boron profiles, without requiring the existence of a diffusion barrier.

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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers

  • D. Alquier (a1), N. E. B. Cowern (a2), P. Pichler (a3), C. Armand (a4), A. Martinez (a1), D. Mathiot (a5), M. Omri (a6) and A. Claverie (a6)...

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