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On Surface Cracking of Ammonia for MBE Growth of GaN

Published online by Cambridge University Press:  10 February 2011

M. Kamp ,
M. Mayer ,
A. Pelzmann  and
K. J. Ebeling
M. Kamp
Affiliation:
Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
M. Mayer
Affiliation:
Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
A. Pelzmann
Affiliation:
Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
K. J. Ebeling
Affiliation:
Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
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Abstract

With the use of ammonia as nitrogen precursor for Group III-Nitrides in an on surface cracking (OSC) approach, MBE becomes a serious competitor to MOVPE. Homoepitaxial GaN exhibits record linewidths of 0.5 meV in PL (4K), whereas GaN grown on c-plane sapphire also reveals reasonable material properties (PL linewidth ≈ 5 meV, n ≈ 1017 cm-3 , μ 220 cm2/Vs). Beside results on hetero- and homoepitaxial growth of GaN, insights into the growth mechanisms are presented. The growth of ternary nitrides is discussed, p- and n-doping as well as first LED results are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 161
Copyright
Copyright © Materials Research Society 1997

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References

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