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On Surface Cracking of Ammonia for MBE Growth of GaN

  • M. Kamp (a1), M. Mayer (a1), A. Pelzmann (a1) and K. J. Ebeling (a1)

Abstract

With the use of ammonia as nitrogen precursor for Group III-Nitrides in an on surface cracking (OSC) approach, MBE becomes a serious competitor to MOVPE. Homoepitaxial GaN exhibits record linewidths of 0.5 meV in PL (4K), whereas GaN grown on c-plane sapphire also reveals reasonable material properties (PL linewidth ≈ 5 meV, n ≈ 1017 cm-3 , μ 220 cm2/Vs). Beside results on hetero- and homoepitaxial growth of GaN, insights into the growth mechanisms are presented. The growth of ternary nitrides is discussed, p- and n-doping as well as first LED results are reported.

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