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On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level Dielectrics

Published online by Cambridge University Press:  15 February 2011

Bin Zhao ,
Shi-Qing Wang ,
Steven Anderson ,
Robbie Lam ,
Marcy Fiebig ,
P. K. Vasudev  and
Thomas E. Seidel
Bin Zhao
Affiliation:
now with Rockwell Semiconductor Systems, Newport Beach, CA
Shi-Qing Wang
Affiliation:
on assignment from National Semiconductor Corp., Santa Clara, CA
Steven Anderson
Affiliation:
SEMATECH, Austin, Texas 78741
Robbie Lam
Affiliation:
on assignment from National Semiconductor Corp., Santa Clara, CA
Marcy Fiebig
Affiliation:
now with Motorola, Austin, TX
P. K. Vasudev
Affiliation:
SEMATECH, Austin, Texas 78741
Thomas E. Seidel
Affiliation:
now with Genus, Sunnyvale, CA
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Abstract

In high performance integrated circuits, low dielectric constant (low-ε) materials are required as inter-level dielectric (ILD) for on-chip interconnect to provide advantages in high speed, low dynamic power dissipation and low cross-talk noise. A variety of low dielectric constant materials, which include fluorinated silicon-oxide, porous silica and porous organic materials, chemical vapor deposited and spin-on deposited (SOD) organic materials, have been developed or are under development to fulfill this need. In this paper, we first review the need and integration architecture of low-ε materials for on-chip interconnect. Then, we discuss the consequence of using low-ε materials as ILD in advanced interconnect with emphasis on the ILD electrical characteristics and the interconnect reliability. Although the focus is on several new promising SOD low-ε materials, the developed evaluation methodology is applicable to other type low-ε materials as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 415
Copyright
Copyright © Materials Research Society 1996

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