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Ohmic Contacts to p-Type InGaAs/InP with a Graded Bandgap Heterobarrier

Published online by Cambridge University Press:  21 February 2011

Patrick W. Leech  and
Geoffrey K. Reeves
Patrick W. Leech
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia.
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Abstract

Ohmic contacts to p-type InP with an In0.47Ga0.53As buffer layer and an interposed superlattice of 50 Å In0.47Ga0.53As/ 50 Å InP have been investigated. Initial studies of contacts to In0.47Ga0.53As/ InP without the superlattice structure have shown that Pd/Zn/Pd/Au metallization produced a lower specific contact resistance (pc = 1.1 × 10−4 Ω cm2) than Pd/Ge/Au, and over a wider range of anneal temperature than Au/Zn/Au. The incorporation of the superlattice in the p-In0.47Ga0.53As/ InP structure resulted in Pd/Zn/Pd/Au contacts with pc of 3.2 × 10−5 Ω cm2 as-deposited and 7.5 × 10−6 Ω.cm2 after a 500 °C anneal. The presence of Pd/Zn in the metallization was shown as important in reducing pc. Significant intermixing of the metal layers and In0.47Ga0.53As occured at ≥ 350 °C, as revealed by Rutherford backscattering spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 183
Copyright
Copyright © Materials Research Society 1994

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References

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