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Ohmic Contacts to GaAs

  • Norman Braslau (a1)

Abstract

The present capability of obtaining ohmic contacts to GaAs over a range of doping levels is reviewed. Possible models of transport across the metalsemiconductor interface are discussed and contact techniques are described. The widely used Au—Ge alloyed contact is seen to have a spatially inhomogeneous interface which appears to control its contact resistance. The most satisfactory process at this time is to alloy into a previously fabricated heavily doped layer.

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Ohmic Contacts to GaAs

  • Norman Braslau (a1)

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