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Ohmic Contact to n-GaN with TiN Diffusion Barrier

Published online by Cambridge University Press:  10 February 2011

E. Kamińska ,
A. Piotrowska ,
M. Guziewicz ,
S. Kasjaniuk ,
A. Barcz ,
E. Dynowska ,
M. D. Bremser ,
O. H. Nam  and
R. F. Davis
E. Kamińska
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl
M. Guziewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl
S. Kasjaniuk
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl
A. Barcz
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl
E. Dynowska
Affiliation:
Institute of Physics, PAS, Al.Lotników 46, Warszawa, Poland
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
O. H. Nam
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

The formation of n-GaN/Ti ohmic contacts with TiN diffusion barriers has been investigated by electrical measurements, x-ray diffraction and SIMS. It has been shown that the onset of the ohmic behaviour is associated with the thermally induced phase transformation of Ti into TiN at the GaN/Ti interface. It is suggested that the process is accompanied by an increase in the doping level in the semiconductor subcontact region. The presence of a TiN barrier is found to inhibit excessive decomposition of GaN and to confine the reaction between n-GaN and Ti.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1055
Copyright
Copyright © Materials Research Society 1997

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References

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