Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T20:21:14.028Z Has data issue: false hasContentIssue false
  • English
  • Français

Ohmic and Quasi-Ohmic Contacts to Hydrogenated Amorphous Silicon Thin Films

Published online by Cambridge University Press:  28 February 2011

Jerzy Kanicki  and
Dan Bullock
Jerzy Kanicki
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Dan Bullock
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Get access

Abstract

An extensive study of contacts properties to undoped and doped hydrogenated amorphous silicon, undertaken in our laboratory, has shown that ohmicity and contact quality are very dependent on the reactivity of the metal and the quality of the metal / a-Si:H interface. For example, metals such as Sc, Mg or Ti form exceptionally good ohmic (very low barrier height) contacts, while others like Al, Cu, Mo or V form very poor quasi-ohmic contacts (average barrier height) to undoped films. In addition, metals such as Y, Ho, Hf or Er create fair quasi-ohmic (low barrier height) contacts to undoped films, at room temperature. The barrier height and the magnitude of current density can be adjusted to some degree not only by the proper choice of metal work function but also by changing material bulk resistivity or/and interface quality. Consequently, specific attention is devoted to these parameters which not only determine the quality of ohmic contact but also the dominant conduction mechanism across the barrier.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 379
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. MRS Symposia Proc. “Comparison of Thin Film Transistor and SOI Technology”, vol. 33, eds. Lam, H.W. and Thompson, M.J., North - Holland, New York, 1984.Google Scholar
2. Matsumura, M., Kuno, S.I. and Uchida, Y., J. de Physique, 42, C4–519 (1981).Google Scholar
3. Schropp, R.E.I., Veltkamp, J.W.C., Snijder, J. and Verwey, J.F.. IEEE Trans. Electron Devices, ED–32, 1757 (1985).Google Scholar
4. Cox, R.H. and Strack, H., Solid-State Electron., 10, 1213 (1967).Google Scholar
5. Semiconductors and Semimetals, vol. 21 “Hydrogenated Amorphous Silicon”, part A “Preparation and Structure”, ed. Pankove, J.I., Academic Press, New York, 1984.Google Scholar
6. Kanicki, J., Ransom, C.M., Bauhofer, W., Chappell, T.I. and Scott, B.A., J. Non-Cryst. Solids, 66, 51 (1984).CrossRefGoogle Scholar
7. Wronski, C.R. and Carlson, D.E., Solid State Comm., 23, 421 (1977).Google Scholar
8. Chang, C.Y., Fang, Y.K. and Sze, S.M., Solid-State Electron., 14, 541 (1971).CrossRefGoogle Scholar
9. Berger, H.H., J. Electrochem. Soc., 119, 507 (1972).Google Scholar
10. Yu, A.Y.C., Solid-State Electron., 13, 239 (1970).Google Scholar
11. Reeves, G.K. and Harrison, H.B., IEEE Electron Device Let., EDL–3, 111 (1982).CrossRefGoogle Scholar
12. Kanicki, J., Minority carrier injection and series resistance effects in hydrogenated amorphous silicon Schottky barrier diodes, Mat. Res. Soc. Symp. Proc., vol. 49, 101 (1985).Google Scholar
13. Wilson, J.I.B. and Robinson, P., Solid - State Electron., 21, 489 (1978).Google Scholar
14. Powell, M.J. and Orton, J.W., Appl. Phys. Lett., 45, 171 (1984).CrossRefGoogle Scholar