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Observations of Surfaces by Electron Microscopy During STM Operation

  • J.C.H. Spence (a1), U. Knipping (a1), R. Norton (a1), W. Lo (a1) and M. Kuwabara (a2)...

Abstract

A scanning tunnelling microscope is described which operates inside a transmission electron microscope in the reflection mode. The device is used to study the mechanism of STM contrast in graphite and semiconductors. It allows for the observation of any strain during tunnelling, using the reflection electron diffraction contrast mechanism. The first results of our new transputer-based digital imaging system for STM are reported.

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References

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Observations of Surfaces by Electron Microscopy During STM Operation

  • J.C.H. Spence (a1), U. Knipping (a1), R. Norton (a1), W. Lo (a1) and M. Kuwabara (a2)...

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