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Observation of the Influence of Strain Induced deep Level Defects on the Electroabsorption Characteristics of InGaAs/GaAs (100) Multiple Quantum well Structures and Implications for Light Modulators

Published online by Cambridge University Press:  26 February 2011

Li Chen ,
Wei Chen ,
K. C. Rajkumar ,
Kezhong Hu  and
A. Madhukar
Li Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
Wei Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
K. C. Rajkumar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
Kezhong Hu
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
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Abstract

In a thick strained GaAs/InGaAs MQW we recently reported the unusual observation of the exciton linewidth initially narrowing upon application of a reverse bias, before the usually observed broadening set in with further increase in the bias. The phenomena suggested the existence of a spatially varying electric field in the MQW region arising from a depletion of the net charge density with increasing reverse bias. Here we provide an explanation for the unusual observation arrived at through a systematic examination of the sample behavior using electro-transmission, electro-photoluminescence, capacitancevoltage profiling and transmission electron microscopy. We conclude that shallow levels cannot account for the observation and that the presence of strain induced point defect related deep levels (either n of p type) offers a consistent explanation. This is the first clear manifestation of the influence of deep levels on the free exciton electroabsorption behavior and has practical implications for MQW based electroabsorptive / electrorefractive light modulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 621
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Miller, D. A. B., Chemia, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H. and Burrus, C. A., Phys. Rev. B 32, 1043 (1985).CrossRefGoogle Scholar
[2] Newson, D. J. and Kurobe, A., Electron. Lett. 23, 440 (1987).Google Scholar
[3] Bradley, P. J., Whitehead, M., Parry, G., Mistry, P., and Roberts, J. S., Applied Optics, 28, 1560 (1989).Google Scholar
[4] Chen, Li, Rajkumar, K. C., and Madhukar, A., Appl. Phys. Lett. 57, 2478 (1990).Google Scholar
[5] Ghaisas, S. V and Madhukar, A., J. Vac. Sc. Tech. B, 7, 264 (1989);Google Scholar
Ogale, S. B. and Madhukar, A., (unpublished).Google Scholar