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Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

Published online by Cambridge University Press:  10 February 2011

D.F. Storm  and
M.D. Lange
D.F. Storm
Affiliation:
Physics Branch, Research and Technology Group, Naval Air Warfare Center Weapons Division, China Lake, CA 93555, StormDF@navair.navy.mil
M.D. Lange
Affiliation:
Cielo Communications, Inc., 325 Interlocken Pkwy.; Bldg. A, Broomfield, CO 80021
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Abstract

Because of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 245
Copyright
Copyright © Materials Research Society 1999

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