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Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope

Published online by Cambridge University Press:  21 February 2011

A. Bosacchi ,
S. Franchi ,
D. Govoni ,
G. Mattei ,
P.G. Merli ,
A. Migliori  and
M. Nacucchi
A. Bosacchi
Affiliation:
Istituto MASPEC del CNR, via Chiavari 18A, 1-43100 Parma, Italy
S. Franchi
Affiliation:
Istituto MASPEC del CNR, via Chiavari 18A, 1-43100 Parma, Italy
D. Govoni
Affiliation:
Istituto LAMEL del CNR, via P. Gobetti 101,1-40129 Bologna, Italy
G. Mattei
Affiliation:
Istituto LAMEL del CNR, via P. Gobetti 101,1-40129 Bologna, Italy
P.G. Merli
Affiliation:
Istituto LAMEL del CNR, via P. Gobetti 101,1-40129 Bologna, Italy
A. Migliori
Affiliation:
Istituto LAMEL del CNR, via P. Gobetti 101,1-40129 Bologna, Italy
M. Nacucchi
Affiliation:
CNRSM SCpA, S.S. 7 Km 714.3, 72100 Brindisi, Italy
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Abstract

Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn't represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 443
Copyright
Copyright © Materials Research Society 1995

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References

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5 Merli, P.G. and Nacucchi, M., Ultramicroscopy, 50 (1993) 83.Google Scholar