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Observation of Random Telegraphic Noise in Large Area a-Si:H/a- Si1−x, Nx:H Double Barrier Structures

Published online by Cambridge University Press:  25 February 2011

R. Arce  and
L. Ley
R. Arce
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
L. Ley
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Random Telegraphic Noise (RTN) with an amplitude of about 1% has been observed in the current through a-Si:H/a-Si1−xNx.:H double barrier structures. The area of the devices, 0.25 mm2, is five orders of magnitude larger than the area of the devices where RTN has previously been observed. The power spectra of the noise can be fitted by a superposition of Lorentzians from which average switching times are deduced. The switching times are thermally activated with activation energies between 0.2 and 0.6 eV and depend on bias voltage. Assuming that the current through these structures is confined to microchannels of cross section area < lμm2 the RTN and its characteristics are explained by the random charging and discharging of individual traps placed in the vicinity of the current channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 675
Copyright
Copyright © Materials Research Society 1989

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References

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