Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-20T19:56:41.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of Damage Structures in Proton-Implanted Gallium Arsenide by Cross-Sectional Tem

Published online by Cambridge University Press:  26 February 2011

D Loretto ,
G. T. Brown  and
I. P. Jones
D Loretto
Affiliation:
Department of Metallurgy and Materials, The University of Birmingham, PO Box 363, Birmingham, B15 2TT, U.K.
G. T. Brown
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Rd., Gt. Malvern, Worcs., WR14 3PS, U.K.
I. P. Jones
Affiliation:
Department of Metallurgy and Materials, The University of Birmingham, PO Box 363, Birmingham, B15 2TT, U.K.
Get access

Abstract

Semi-insulating and SI-doped <100> GaAs have been irradiated to a dose of 1016 protons cm−2. Samples have been annealed for 20 minutes at 400,500 and 600°C. Cross-sectional TEN has shown the as-implanted and 400°C annealed GaAs to contain no visible damage. After 500 and 600°C anneals a heterogeneous distribution of planar raft-like defects apears on {(11} and {110}. The density of these defects is much lower in the Si-doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 133
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Speight, J.D., O'Sullivan, P., Leigh, P.A., McIntyre, N.M., Cooper, K. and O'Hara, S., IOP conf. ser. No. 33a, GaAs and related canpounds (Edinburgh) 1976, edited by Hilsum, C.,(IOP, Bristol, 1977), p. 275.Google Scholar
2. Liou, L.L., Spitzer, W.G., Zavada, J.M. and Jenkinson, H.A., J. Appl. Phys. 59, 1936 1986.Google Scholar
3. Lang, D.V., IOP Conf. ser. No. 31, Radiation effects in semiconductors 1976, edited by Urli, N.B. and Corbett, J.W., (IOP, Bristol, 1977), p. 74.Google Scholar
4. Dannefaer, S. and Kerr, D., J. Appl. Phys. 60, 591 1986.Google Scholar
5. Matsamura, H. and Stephens, K.G., J. Appl. Phys. 48, 2779 1977.CrossRefGoogle Scholar
6. Newman, R.C. and Woodhead, J., Rad. Effs. 53, 41 1980.CrossRefGoogle Scholar
7. Neethling, J.H., Snyman, H.C. and C.Ball, A.B., Proc. 13th Int. Conf. on Defects in Semiconductors (Coronado Calif., 1984), eds. Kimmerling, L.C. and Parsey, J.M. jr., (Metallurgical soc. of AIME, 1985), pp. 427-433.Google Scholar
8. Sadana, D.K., Zavada, J.M., Jenkinson, H.A. and Sands, T., Appl. Phys. Letts. 47, 691 1985.Google Scholar
9. Martin, G. and Makram-Ebeid, S., Acta Elec. 25, 133 1983.Google Scholar
10. Wilson, R.G., Betts, D.A., Sadana, D.K., Zavada, J.M. and Hunsperger, R.G., J. Appl. Phys. 57, 5006 1985.Google Scholar