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Nucleation of Dislocations in SIGe Layers

Published online by Cambridge University Press:  21 February 2011

P.M. Mooney ,
F.K. Legoues  and
J.O. Chu
P.M. Mooney
Affiliation:
IBM Research Division, T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, USA
F.K. Legoues
Affiliation:
IBM Research Division, T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, USA
J.O. Chu
Affiliation:
IBM Research Division, T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, USA
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Abstract

We present an x-ray diffraction study of the variation of the tilt angle between a relaxed Si1−xGex epitaxial layer and the Si (001) substrate. Such measurements provide the basis for a new method to determine the nucleation activation energy of misfit dislocations. We show that the nucleation activation energy for 60° dislocations in the case of the multiplication mechanism observed in graded SiGe layers grown by UHV-CVD at low temperature is 4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 147
Copyright
Copyright © Materials Research Society 1994

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