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Nucleation Barriers in Chemical Vapor Deposition of Triisobutylaluminum on Silicon

Published online by Cambridge University Press:  25 February 2011

D. A. Mantell
D. A. Mantell*
Affiliation:
Xerox Webster ResearchCenter, Webster, NY 14580
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Abstract

The nucleation of chemical vapor deposition (CVD) using triisobutylaluminum (TIBA) on Si (100) surfaces is observed in situ with x-ray photoelectron spectroscopy (XPS). Oxygen from oxide on the silicon inhibits the rate of nucleation by reacting with adsorbed TIBA and forming a thin layer of oxidized organometallic. This layer blocks active adsorption sites and prevents further deposition. On a surface without oxide, the TIBA molecules decompose liberating aluminum that can migrate and nucleate into islands opening sites for further adsorption and film growth. By removing the oxide (native or thermal) in selected areas of the surface, the barrier to nucleation is removed and aluminum deposition can occur in a predetermined pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 357
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Cooke, M.J., Heinecke, R.A., Stern, R.C., and Maes, J.W.C., Solid State Tech., 25, 62 (1982).Google Scholar
2. Green, M.L., Levy, R.A., Nuzzo, R.G., and Coleman, E., Thin solid Films 114, 367 (1984).Google Scholar
3. Ehrlich, D.J., Osgood, R.M. Jr., and Deutch, T.F., Appl. Phys. Lett. 38, 964 (1981); J.Y. Tsao and D.J. Ehrlich, AppI. Phys. lett. 45, 617 (1984); JY.- Tsao and D.J. Ehrlich, Journal of Crystal Growth 68, 176 (1984).Google Scholar
4. Mantell, D.A. and Orlowski, T.E., Mat. Res. Soc. Symp. Proc., Vol.101 (1988).Google Scholar
5. Higashi, G.S. and Fleming, C.G., Appl. Phys. Lett. 48, 1051 (1986); G.S. Higashi, G.E. Blonder, and C.G. Fleming, Mat. Res. Soc. Symp. Proc., Vol.75 (1987); C.G. Fleming, G.E. Blonder, and G.S. Higashi, Mat. Res. Soc. Symp. Proc., Vol.101 (1988), G.E. Blonder, G.S. Higashi, and C.G. Fleming, Appl. Phys. Lett. 50, 766 (1987).CrossRefGoogle Scholar
6. Miller, N. and Herring, R., 159th Meeting of Electrochem. Soc., 81, 712 (1981).Google Scholar
7. R.S Bauer, Bachrach, R.Z., and Brillson, L.J., Appl. Phys. lett. 37, 1006 (1980).Google Scholar
8. Since the thermocouple was imbedded in the manipulator holder and was not directly on the silicon sample, this temperature may be an overestimate of the true surface temperature.Google Scholar
9. B.E. Bent, R.G. Nuzzo, and L.H. Dubois, in press; Bent, B.E., Nuzzo, R.G., and Dubois, L.H., Mat. Res. Symp. Proc., Vol.101, 177 (1988).CrossRefGoogle Scholar