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The Nucleation and Growth of Germanium on (1102) Sapphire Deposited by Molecular Beam Epitaxy

  • David J. Godbey (a1) and Mark E. Twigg (a1)

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Single crystal undoped germanium has been grown successfully for the first time on (1102) sapphire [1,2]. Germanium was found to grow (110) with an in plane registry of Ge(111)/Al203(1012) [1]. When a 2μm germanium film was grown on (1102) sapphire at 800°C and after a substrate preanneal of 1400°C, the X-ray line width of the Ge(220) reflection was measured to be 230 arcseconds [2]. Strain was observed only in germanium films that were thinner than 40 nm [2].

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1 Godbey, D.J., Qadri, S.B., Twigg, M.E., and Richmond, E.D.. Appl. Phys. Lett., 54, 2449, (1989).
2 Godbey, D.J., Qadri, S.B., Twigg, M.E., and Richmond, E.D.. Thin Solid Films, 182, In press, (1989).
3 Twigg, M.E. and Richmond, E.D.. J. Appl. Phys., 64, 3037, (1988).
4 Chang, C.C.. J. Vac. Sci. Technol., 8, 500, (1971).
5 Kim, Y. and Hsu, T.. Proceedings of the 47th Annual Meeting of the Electron Microscopy Society of America, page~546, San Antonio, Texas, (1989).
6 Abrahams, M.S., Buiocchi, C.J., Smith, R.T., Corboy, J.F., Blanc, J., and Cullen, G.W.. J. Appl. Phys., 47, 5139, (1976).
7 Blanc, J. and Abrahams, M.S.. J. Appl. Phys., 47, 5151, (1976).

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