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Nucleation and Growth of CVD Si Thin Films: AFM, SE and Tem Analysis

Published online by Cambridge University Press:  21 February 2011

W. M. Paulson ,
R. I. Hegde ,
B. B. Doris ,
V. Kaushik ,
P. J. Tobin ,
J. Fitch ,
W. A. McGahan  and
J. A. Woollam
W. M. Paulson
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
R. I. Hegde
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
B. B. Doris
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
V. Kaushik
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
P. J. Tobin
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
J. Fitch
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
W. A. McGahan
Affiliation:
J.A. Woollam Co., 650 J Street, Lincoln, NE 68508
J. A. Woollam
Affiliation:
J.A. Woollam Co., 650 J Street, Lincoln, NE 68508
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Abstract

The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopie ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 77
Copyright
Copyright © Materials Research Society 1995

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References

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