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N-Type Doping by Plasma Ion Implantation Using a PH3 SDS System

Published online by Cambridge University Press:  03 September 2012

Shu Qin ,
Yuanzhong Zhou ,
Keith Warner ,
Chung Chan ,
Jiqun Shao  and
Stuart Denholm
Shu Qin
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Yuanzhong Zhou
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Keith Warner
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Chung Chan
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Jiqun Shao
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
Stuart Denholm
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
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Abstract

PH3 SDS (safe delivery system) gas was used for the first time in P11 doping experiments to fabricate n+p junctions and NMOS devices. Two gas recipes (PH3 diluted in H2 and He) were investigated. Under lower pressure, a minimum etching effect was observed. A 4x1015/cm2 phosphorus dose and a 22 Ω/□ sheet resistance were achieved in 4 seconds. Very low contamination level was involved. An anomalous tail of P profile in Si substrate was observed using SIMS measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 351
Copyright
Copyright © Materials Research Society 1997

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References

1. Qin, S., Chan, C., McGruer, N., and Warner, K., IEEE Trans. Plasma Sci. 19, 1272 (1991).Google Scholar
2. Qin, S. and Chan, C., J. Vac. Sci. and Tech. B 12, 962 (1994).Google Scholar
3. Cheung, N. W., Nucl. Instr. and Meth. B55, 811 (1991).Google Scholar
4. Bernstein, J. D., Qin, S., Chan, C. and King, T.-J., IEEE Trans. on Electron Device 43, 1876 (1996).Google Scholar
5. Under development by Novapure Corp. and Matheson Electronic Gas Products.Google Scholar
6. Qin, S., Bernstein, J. D., and Chan, C., MRS Sym. Proceedings 396, 509 (1996).Google Scholar
7. Qin, S., Bernstein, J. D., and Chan, C., J. of Elec. Mat. 25, 507 (1996).Google Scholar
8. Ziegler, J. F., Biersack, J.P. and Littmark, U., The Stopping Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar
9. Kakinuma, H. and Mohri, M., Jpn. J. Appl. Phys. 34, L1325 (1995).Google Scholar
10. Li, J., Appl. Phys. Lett. 55, 2223 (1989).Google Scholar