Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-18T21:48:45.937Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Technique for Growth of Lithium-free ZnO Single Crystals

Published online by Cambridge University Press:  16 May 2013

Shaoping Wang ,
Aneta Kopec  and
Andrew G. Timmerman
Shaoping Wang
Affiliation:
Fairfield Crystal Technology, 8 South End Plaza, New Milford, CT 06776, USA
Aneta Kopec
Affiliation:
Fairfield Crystal Technology, 8 South End Plaza, New Milford, CT 06776, USA
Andrew G. Timmerman
Affiliation:
Fairfield Crystal Technology, 8 South End Plaza, New Milford, CT 06776, USA
Get access

Abstract

A ZnO single crystal is a native substrate for epitaxial growth of high-quality thin films of ZnO-based Group II-oxides (e.g. ZnO, ZnMgO, ZnCdO) for variety of devices, such as UV and visible-light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors. Currently, commercially available ZnO single crystal wafers are produced using a hydrothermal technique. The main drawback of hydrothermal growth technique is that the ZnO crystals contain large amounts of alkaline metals, such as Li and K. These alkaline metals are electrically active and hence can be detrimental to device performances. In this paper, results from a recently developed novel growth technique for ZnO single crystal boules are presented. Lithium-free ZnO single crystal boules of up to 1 inch in diameter was demonstrated using the novel technique. Results from crystal growth and materials characterization will be discussed.

Keywords

crystal growthoxidesemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 405 - 410
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Look, D. C., “Recent advances in ZnO materials and devices”, Mater. Sci. Eng. B80, 383–387 (2001).CrossRefGoogle Scholar
Morkoc, H., and Ozgur, U., Zinc Oxide – Fundamentals, Materials, and Device Technology, Wiley-VCH Verlag GmbH & Co. KGaA, Weiheim, (2009).Google Scholar
Rojo, J. C., Liang, S., Chen, H., Dudley, M., “Physical vaport transport crystal growth of ZnO”, in Zinc Oxide Materials and Device, edited by Teherani, F. H., and Litton, C. W., Proc. of SPIE , Vol. 6122, 61220Q1–8 (2006).Google Scholar
Litton, C. W., Reynolds, D. C., Collins, T. C., editors, Zinc Oxide – Materials for Electronic and Optoelectronic Device Applications, John Wiley & Sons Ltd., West Sussex, UK (2011).CrossRefGoogle Scholar
Sakagami, N., “Hydrothermal growth and characterization of ZnO single crystals of high purity”, J. Crystal Growth, 99, 905–909 (1990).CrossRefGoogle Scholar
Ohshima, E., Ogino, H., Niikura, I., Maeda, K., Sato, M., Ito, M., Fukuda, T., “Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method”, Journal of Crystal Growth, Volume 260, Issues 1–2, 166–170 (2004).CrossRefGoogle Scholar
Wang, S., Kopec, A., Timmerman, A. G., “Growth and characterization of large-diameter, lithium-free ZnO single crystals”, in Oxide-based Materials and Device III, edited by Teherani, F. H., Look, D. C., Rogers, D. J., Proc. of SPIE , Vol. 8263, 82630E1–8 (2012).Google Scholar
Nause, J., and Nemeth, B., “Pressurized melt growth of ZnO boules”, Semicond. Sci. Technol. 20, No. 4, S45–S48 (2005).CrossRefGoogle Scholar
Klimm, D., Ganschow, S., Schulz, S., Fornari, D., “The growth of ZnO crystals from the melt”, Journal of Crystal Growth, Volume 310, Issue 12, 3009–3013 (2008).CrossRefGoogle Scholar