Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-23T13:35:32.064Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

Published online by Cambridge University Press:  11 February 2011

J.S. Huang ,
T. Nguyen ,
N. Bar-Chaim ,
C.B. Vartuli ,
S. Anderson ,
J. Shearer  and
C. Fisher
J.S. Huang
Affiliation:
Agere Systems, Optical Access Division, 2015 W. Chestnut Street, Alhambra, CA 91803
T. Nguyen
Affiliation:
Agere Systems, Optical Access Division, 2015 W. Chestnut Street, Alhambra, CA 91803
N. Bar-Chaim
Affiliation:
Agere Systems, Optical Access Division, 2015 W. Chestnut Street, Alhambra, CA 91803
C.B. Vartuli
Affiliation:
Agere Systems, 9333 S. John Young Parkway, Orlando, FL 32819
S. Anderson
Affiliation:
Agere Systems, 9333 S. John Young Parkway, Orlando, FL 32819
J. Shearer
Affiliation:
Agere Systems, 2525 N. 12th Street, Reading, PA 19612
C. Fisher
Affiliation:
Agere Systems, 2525 N. 12th Street, Reading, PA 19612
Get access

Abstract

We studied the influence of n-metal alloy on the long wavelength InP device performance. Various alloy schemes of rapid thermal annealing (RTA) were experimented to obtain the optimized contact resistance for the n-InP/AuGe/Ni/Au/Cr/Au metallization systems. Significant resistance reduction was achieved at 390°C for 45sec with wafer flattening step at 310°C. Using scanning transmission electron microscopy (STEM) and Auger electron spectroscopy (AES) analyses, we showed that resistance was correlated with interfacial reaction at the n-InP/metal. For the high resistance devices, little interfacial reaction between n-InP and Au occurred. For the low resistance devices, significant out-diffusion of P in the bottom Au and Ni layers occurred, forming Au-P and Ni-P metallic compounds. In addition, accumulation of Ge in the Ni layer was also detected. We suggest that Ni-P is very critical in obtaining low contact resistance for n-InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.47
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kupal, E., Solid State Electron. 24, 69 (1981).Google Scholar
[2] Clausen, T. and Leistiko, O., Microelectron. Eng. 18, 305 (1992).Google Scholar
[3] Fatemi, N. S. and Weizer, V.G., J. Appl. Phys. 77, 5241 (1995).Google Scholar
[4] Giannuzzi, L.A., Drown, J.L., Brown, S.R., Irwin, R.B. and Stevie, F.A., Mater. Res. Soc. Symp. Proc. 480, 19 (1997).Google Scholar
[5] Vartuli, C.B., Stevie, F.A., Giannuzzi, L.A., Shofner, T.L., Purcell, B.M., Irwin, R.B., McKinley, J.M. and Wesson, R.J., Microscopy and Microanalysis 2000 Proceedings, Springer (2000) 536 Google Scholar
[6] Huang, J.S., Chen, C., Yeh, C.C., Tu, K.N., Shofner, T.L., Drown, J.L., Irwin, R.B. and Vartuli, C.B., J. Mater. Res. 15, 2387 (2000).Google Scholar
[7] Huang, J.S., Vartuli, C.B., Nguyen, T., Bar-Chaim, N., Shearer, J., Fisher, C. and Anderson, S., J. Mater. Res. 17, 2929 (2002).Google Scholar
[8] Weizer, V.G. and Fatemi, N.S., J. Appl. Phys. 69, 8253 (1991).Google Scholar
[9] Fatemi, N.S. and Weizer, V.G., J. Appl. Phys. 74, 6740 (1993).Google Scholar