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Novel Precursors for the Deposition of II-VI Semiconductor Films

Published online by Cambridge University Press:  25 February 2011

Manfred Bochmann  and
Kevin J. Webb
Manfred Bochmann
Affiliation:
School of Chemical Sciences, University of East Anglia, Norwich NR4 7TJ., United Kingdom
Kevin J. Webb
Affiliation:
School of Chemical Sciences, University of East Anglia, Norwich NR4 7TJ., United Kingdom
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Abstract

Highly sterically hindered chalcogenolato complexes M(EC6H2R3-2,4,6)2 (M = Zn, Cd, Hg; E = S, Se, Te; R = Me, Pri, But) have been prepared. Compounds with R -= But are volatile under reduced pressure and are suitable as precursors for the deposition of II-VI films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 149
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Halsall, M.P., Davies, J.J., Nicholls, J.E., Cockayne, B., Wright, P.J. and Russell, G.J., J.Cryst.Growth, 91, 135 (1988), and cited references.Google Scholar
[2] Said, F.F. and Tuck, D.G., Inorg. Chim. Acta, 1 (1982); D. Craig, I.G. Dance and R. Garbutt, Angew. Chem. Int. Ed. Engl. 25, 165 (1986); I.G. Dance, R.G. Garbutt, D.C. Craig and M.L. Scudder, Inorg.Chem. 26, 4057 (1987); I.G. Dance. R.G. Garbutt. D.C. Craig, M.L. Scudder and T.D. Bailey, J.Chem.Soc.Chem.Commun. 1154 (1987); I.G. Dance, R. Garbutt and M.L. Scudder, Inorg. Chem. 29, 1571 (1990); H.B. Bürgi, Helv.Chim.Acta 57, 513 (1974); E. Dubler and E. Gyr, Inorg.Chem. 27, 1466 (1988).Google Scholar
[3] Bochmann, M., Webb, K., Harman, M. and Hursthouse, M.B., Angew. Chem. 102, 703 (1990); Angew. Chem. lnt.Ed. Engl. 29, 638 (1990); M. Bochmann and K. Webb, Abstr.5th lnt.Conf.Metalorg. Vapour Phase Epitax, Aachen 1990, p.205.Google Scholar
[4] Bochmann, M., Webb, K.J., Hursthouse, M.B. and Mazid, M., Angew.Chem., submitted.Google Scholar
[5] Bochmann, M., Webb, K.J., Hursthouse, M.B. and Mazid, M., J.Chem.Soc., Dalton Trans., submitted.Google Scholar