Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-22T11:31:52.298Z Has data issue: false hasContentIssue false

A Novel Poly-Si TFT in Line-Crossover with High Aperture Ratio and Small Signal Delay of AMLCD Panel

Published online by Cambridge University Press:  17 March 2011

Jin-Woo Park
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
In-Hyuk Song
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Get access

Abstract

We have proposed and fabricated a novel poly-Si TFT that is integrated into the gate-data line-crossover in order to increase aperture ratio and to decrease signal delay of AMLCD panel and electrical characteristics of TFT integrated into gate-data line-crossover almost are identical to conventional TFT. The aperture ratio of AMLCD panel was increased considerably because the TFT was located under the opaque metal line. We employed a low dielectric air-gap between the gate-data line crossover, which reduced a capacitance between the gate and data lines so that the RC signal delay of the data line is decreased significantly. Our experimental result shows that the fabricated TFT was successfully operated and the proposed structure found to reduce the RC signal delay has been reduced by factor of 9 compared with conventional AMLCD panel that employs SiO2 for insulator between gate and data lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Proano, R. E., Misage, R. S., Jones, D., and Ast, D. G., “Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors,” IEEE Trans. Electron Devices. 38, 1781 (1991).Google Scholar
2. Colgan, E. G. et al. , “A 10.5-in.-diagonal SXGA active-matrix display,” IBM Journal of Research and Development '98. 42, 427 (1998).Google Scholar
3. Azami, M. et al. “A 2.6-in. DTV TFT-LCD with Area-Reduced Integrated 8-bit Digital Data Drivers Using 400-Mobility CGS Technology,” SID ‘99 Digest, 6 (1999).Google Scholar
4. Akiyama, M. et al. “A Low-Power Image-Memory AMLCD Using Ferroelectric Film with Gray-Scale Capability,” SID ‘99 Digest, 10 (1999).Google Scholar
5. Shinomiya, T., Kawabata, M., Nagae, N., Izumi, Y., Fujimori, K., Fujiwata, S., Shiota, M., Ishii, Y., and Funada, F., “A 40-inch diagonal direct view TFT-LCD by seamless connection technique,” SID '97 Digest, 497 (1997).Google Scholar
6. Yoo, J. S., Kim, C. H., Choi, K. Y., Park, K. C., and Han, M. K., “Fabrication of Low-Temperature Dual Gate Poly-Si TFT for High Aperture Ratio AMLCD,” IDW '97 Digest, 877 (1997).Google Scholar
7. Suzuki, K., “Pixel Design of TFT-LCDs for High Quality Images,” SID '92 Digest, 39 (1992).Google Scholar
8. Park, C. M., Kang, J. H. and Han, M. K., “A novel air-bridge type gate-data-line crossover to reduce signal delay for large size AMLCDs”, SID ‘99 Digest, 18 (1999).Google Scholar