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Novel Luminescence Band in Silicon Implanted with Phosphorus and Boron

Published online by Cambridge University Press:  25 February 2011

A.K. Srivastava ,
D.K. Sharma ,
K.L. Narasimhan ,
D. Sarkar  and
V. Premchandran
A.K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay-400005, India
D.K. Sharma
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay-400005, India
K.L. Narasimhan
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay-400005, India
D. Sarkar
Affiliation:
Indian Telephone Industries, Doorvani Nagar, Bangalore 560016, India.
V. Premchandran
Affiliation:
Indian Telephone Industries, Doorvani Nagar, Bangalore 560016, India.
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Abstract

Photoluminescence measurements on silicon implanted with boron, phosphorus, and dual implanted with phosphorus and boron are reported. A high intensity luminescence band between 0.9–1.03 eV is observed in the samples with dual implantation of boron and phosphorus. The luminescence band has similar spectral characteristics as that of the 1.018 eV W or II band which is observed in silicon samples irradiated with neutrons or ions. However the annealing behaviour of the luminescence band observed in our samples differs considerably from that of the W band, whose intensity increases on annealing at 525 K and is quenched on heating to 600 K. The luminescence band in our samples is not annealed out even at 900 C. The temperature dependence of the intensity of the luminescence band is also studied. It shows excitonic behaviour with an activation energy of 52 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 269
Copyright
Copyright © Materials Research Society 1990

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References

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