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A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

  • L. P. Ren (a1), P. Liu (a2), G. Z. Pan (a2) and Jason C. S. Woo (a2)

Abstract

A novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

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A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

  • L. P. Ren (a1), P. Liu (a2), G. Z. Pan (a2) and Jason C. S. Woo (a2)

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