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A Novel Iridium Precursor for MOCVD

  • Kazuhisa Kawano (a1), Mayumi Takamori (a2), Tetsu Yamakawa (a2), Soichi Watari (a3), Hironori Fujisawa (a3), Masaru Shimizu (a3), Hirohiko Niu (a3) and Noriaki Oshima (a1)...

Abstract

A novel liquid iridium precursor (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD), was synthesized and its physical properties were examined. Ir(EtCp)(CHD) exhibited enough vapor pressure (0.1 Torr/75°C), excellent volatility and adequate decomposition temperature. Characteristics of the Ir films deposited using Ir(EtCp)(CHD) and the conventional Ir precursor (1,5-cyclooctadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(COD), by metal-organic chemical vapor deposition (MOCVD) method were compared. Ir films grown using Ir(EtCp)(CHD) showed shorter incubation time and higher nucleation density than those of films using Ir(EtCp)(COD).

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A Novel Iridium Precursor for MOCVD

  • Kazuhisa Kawano (a1), Mayumi Takamori (a2), Tetsu Yamakawa (a2), Soichi Watari (a3), Hironori Fujisawa (a3), Masaru Shimizu (a3), Hirohiko Niu (a3) and Noriaki Oshima (a1)...

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