Skip to main content Accessibility help
×
Home

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

  • C-M Park (a1), M-C Lee (a1), J-H Jeon (a1) and M-K Han (a2)

Abstract

Excimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

Copyright

References

Hide All
1) Proano, R. E., Misage, R. S. and Ast, D. G., IEEE Trans. Electron Devices ED–36, 1915 (1989).
2) Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., IEEE Trans. Electron Devices ED–36, 1929 (1989).
3) Watanabe, H., Miki, H., Sugai, S., Kawasaki, K. and Kioka, T., Jpn. J. Appl. Phys. 33, 4491 (1994).
4) Kodama, N., Tanabe, H., Sera, K., Hamada, K., Saitoh, S., Okumura, F. and Ikeda, K., Solid State Devices and Materials, 431, (1993)
5) Kim, H. J. and Im, J. S., Appl. Phys. Lett. 63, 1969 (1993).
6) Yamaoka, T., Oyoshi, K., Tagami, T., Arima, Y., Yamashita, K. and Tanaka, S., Appl. Phys. Lett. 57, 1970 (1990).
7) Song, H. J. and Im, J. S., Appl. Phys. Lett. 68, 3165 (1996).

Related content

Powered by UNSILO

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

  • C-M Park (a1), M-C Lee (a1), J-H Jeon (a1) and M-K Han (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.