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A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass

  • Leila Rezaee (a1), Shamsoddin Mohajerzadeh (a1), Ali Khakifirooz (a2), Saber Haji (a1) and Ebrahim Asl Soleimani (a1)...

Abstract

A novel method of UV-assisted metal-induced-crystallization is introduced to grow polysilicon films on ordinary glass at temperatures as low as 400°C. Annealing is accomplished in the presence of an ultra-violet exposure, leading to high crystallinity of the silicon film as confirmed by XRD, TEM and SEM analyses. A back-reflecting chromium layer is incorporated to further trap UV photons and enhance their absorption in the silicon film. This results in a significant increase in the crystallization rate as studied by XRD spectroscopy. A growth rate of 2 µm/hr is observed at 400 °C, when employing this method for lateral crystallization. Thin-film transistors fabricated using the proposed UV-assisted MILC show a threshold voltage of 1V and hole mobility of about 50 cm2/V.s.

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A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass

  • Leila Rezaee (a1), Shamsoddin Mohajerzadeh (a1), Ali Khakifirooz (a2), Saber Haji (a1) and Ebrahim Asl Soleimani (a1)...

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