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A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass

Published online by Cambridge University Press:  17 March 2011

Leila Rezaee ,
Shamsoddin Mohajerzadeh ,
Ali Khakifirooz ,
Saber Haji  and
Ebrahim Asl Soleimani
Leila Rezaee
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Shamsoddin Mohajerzadeh
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Ali Khakifirooz
Affiliation:
Currently at Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.Akhaki@mtl.mit.edu
Saber Haji
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Ebrahim Asl Soleimani
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
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Abstract

A novel method of UV-assisted metal-induced-crystallization is introduced to grow polysilicon films on ordinary glass at temperatures as low as 400°C. Annealing is accomplished in the presence of an ultra-violet exposure, leading to high crystallinity of the silicon film as confirmed by XRD, TEM and SEM analyses. A back-reflecting chromium layer is incorporated to further trap UV photons and enhance their absorption in the silicon film. This results in a significant increase in the crystallization rate as studied by XRD spectroscopy. A growth rate of 2 µm/hr is observed at 400 °C, when employing this method for lateral crystallization. Thin-film transistors fabricated using the proposed UV-assisted MILC show a threshold voltage of 1V and hole mobility of about 50 cm2/V.s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.5
Copyright
Copyright © Materials Research Society 2001

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References

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